EPITAXIAL WAFER, METHOD OF MANUFACTURING EPITAXIAL WAFER, DIODE, AND CURRENT RECTIFIER

摘要

An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier. The epitaxial wafer comprises a Si substrate layer (11); an insulating layer (12) formed on the Si substrate layer (11); and a nitride semiconductor layer (13) formed on a surface of the insulating layer (12) facing away from the Si substrate layer (11); wherein the insulating layer (12) has a thickness configured such that under a forward bias voltage, the insulating layer (12) may allow electrons and holes to pass from one side to the other side of the insulating layer (12) via quantum tunneling so as to allow a forward current flow. Under reverse bias, the insulating layer (12) can hinder formation of free electrons and holes so as to block a reverse current. Thus, the epitaxial wafer is enabled to have the characteristic of allowing passage of a current only in one direction and can be made into a diode or the like for a current rectifying component.