METAL CHLORIDE GAS GENERATOR AND METAL CHLORIDE GAS GENERATION METHOD, AND HYDRIDE VAPOR PHASE EPITAXIAL GROWTH APPARATUS, NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, WAFER FOR NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE, MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE, AND NITRIDE SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a metal chloride gas generator capable of improving stability of metal chloride gas concentration and responsibility to variation in the concentration of the metal chloride gas.;SOLUTION: A metal chloride gas generator includes: a raw material container 1 for storing a metal raw material M; a gas supply port 2 provided on the raw material container 1 and supplying a chlorine-containing gas G1 containing a chlorine-based gas into the raw material container 1; a gas exhaust port 3 provided on the raw material container 1 and discharging a metal chloride-containing gas G2 containing a metal chloride generated by a reaction of the chlorine-based gas contained in the chlorine-containing gas G1 and the metal raw material M out of the raw material container 1; and partition plates 6 for partitioning a space S above the metal raw material M in the raw material container 1 to form a gas passage P extending from the gas supply port 2 to the gas exhaust port 3. The gas passage P is formed so as to be a continuous path reaching the gas exhaust port 3 from the gas supply port 2, the passage width W in a horizontal direction of the gas passage P is equal to or less than 5 cm, and the gas passage P has bent portions E.;COPYRIGHT: (C)2013,JPO&INPIT