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IMPLANTED DOPANT ACTIVATION FOR WIDE BANDGAP SEMICONDUCTOR ELECTRONICS
IMPLANTED DOPANT ACTIVATION FOR WIDE BANDGAP SEMICONDUCTOR ELECTRONICS
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机译:用于宽带隙半导体电子器件的掺杂掺杂剂激活
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摘要
An enhanced symmetric multicycle rapid thermal annealing process for removing defects and activating implanted dopant impurities in a III-nitride semiconductor sample. A sample is placed in an enclosure and heated to a temperature T1 under an applied pressure P1 for a time t1. While the heating of the sample is maintained, the sample is subjected to a series of rapid laser irradiations under an applied pressure P2 and a baseline temperature T2. Each of the laser irradiations heats the sample to a temperature Tmax above its thermodynamic stability limit. After a predetermined number of temperature pulses or a predetermined period of time, the laser irradiations are stopped and the sample is brought to a temperature T3 and held at T3 for a time t3 to complete the annealing.
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