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IMPLANTED DOPANT ACTIVATION FOR WIDE BANDGAP SEMICONDUCTOR ELECTRONICS

机译:用于宽带隙半导体电子器件的掺杂掺杂剂激活

摘要

An enhanced symmetric multicycle rapid thermal annealing process for removing defects and activating implanted dopant impurities in a III-nitride semiconductor sample. A sample is placed in an enclosure and heated to a temperature T1 under an applied pressure P1 for a time t1. While the heating of the sample is maintained, the sample is subjected to a series of rapid laser irradiations under an applied pressure P2 and a baseline temperature T2. Each of the laser irradiations heats the sample to a temperature Tmax above its thermodynamic stability limit. After a predetermined number of temperature pulses or a predetermined period of time, the laser irradiations are stopped and the sample is brought to a temperature T3 and held at T3 for a time t3 to complete the annealing.
机译:一种增强的对称多环快速热退火方法,用于去除III-氮化物半导体样品中的缺陷和激活植入掺杂剂杂质。 将样品放置在外壳中并在施加的压力P1下加热到温度T1的时间t1。 虽然保持样品的加热,在施加的压力P2和基线温度T2下对样品进行一系列快速激光照射。 每个激光照射将样品加热到高于其热力学稳定性极限的温度Tmax。 在预定数量的温度脉冲或预定的时间段之后,停止激光照射,并将样品带到温度T3并在T3处保持一段时间T3以完成退火。

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