Characterizing and Modeling Transient Behavior in Power Electronic Circuits with Wide Bandgap Semiconductors and in Maximum Power Point Tracking for Photovoltaic Systems

摘要

This dissertation examines the transient characteristics in next generation power electronic circuits at both the device-level and the systems-level. At the device-level, the effect of the parasitic capacitances on the switching performance of emerging wide bandgap semiconductors (WBG) is evaluated. Equivalent device models based on gallium nitride (GaN) and silicon carbide (SiC) are implemented in SaberRD and MATLAB, and transient switching characteristics are analyzed in great detail. The effects of the parasitic capacitances on detrimental circuit behavior such as “overshoot,” “ringing,” and “false turn-on” are investigated. The modeled results are supplemented and validated with experimental characterization of the devices in various power conversion circuits. The models can be used to aid in the design of next generation WBG devices so that the undesirable transient effects displayed by contemporary versions of these devices can be mitigated. udAt the systems-level, the transient overshoot demonstrated by conventional maximum power point tracking algorithms for photovoltaic power conversion systems is investigated. An adaptive controller is implemented so that the operating point can converge to the optimal power point rapidly with minimal overshoot. This new controller overcomes the parasitic components inherent to the power converter which limit its ability to deliver maximum power rapidly. It will be shown that with the new controller, the maximum power point is attainable in 4 milliseconds. udThe work accomplished in this dissertation lays a foundation for power electronic engineers to integrate semiconductor device theory with control theory to optimize the performance of next generation power conversion systems.