Manufacturing method of palladium coated copper bonding wire, palladium coated copper bonding wire, wire bonding structure using the same, semiconductor device and its manufacturing method

摘要

The PD coated Cu bonding wires of the embodiment have a group of 1.0 to 4.0 mass% of PD and a total of 50 mass ppm or less s-group elements (from 5.0 to 12.0 mass ppm, from 5.0 to 20.0 mass ppm, or 15.0 to 50 mass ppm TE).The orientation ratio in the crystal plane of the wire cross section is 15% or more and the orientation ratio is 50% or less.When a free air ball is formed on this wire and the tip portion is analyzed, a PD concentration region is observed on the surface.