SHIELDED GATE TRENCH MOSFET HAVING SUPER JUNCTION SURROUNDING LOWER PORTION OF TRENCHED GATES

摘要

An SGT MOSFET having super junction surrounding lower portion of trenched gates is disclosed. The super junction structure is surrounding lower portion of trenched gates to ensure whole drift region is fully depleted and breakdown occurs at middle of adjacent trenched gates without having early breakdown occurring at trench bottom. Moreover, sensitivity of breakdown voltage on trench bottom oxide thickness and trench depth is significantly relaxed or immune. Avalanche capability is also enhanced.