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Wafer processing method

机译:晶圆处理方法

摘要

A wafer processing method that processes a wafer that has components on one side of the front surface. The method includes a wafer-with-protective component forming step in which the wafer with a protective component is formed by adhering the protective component formed of a heat-softening resin to the side of the front surface by pressing and heating the protective component A thickness measuring step in which the thickness of the protective component in the wafer with the protective component is measured, and a grinding step in which the wafer with the protective component is held by a chuck table and one side of the back surface of the wafer is ground until the thickness of the wafer reaches an intended final thickness. In the grinding step, the thickness of the protective component measured in the thickness measuring step is subtracted from a total thickness of the wafer with the protective component in order to calculate the thickness of the wafer.
机译:一种处理晶片的晶片处理方法,该晶片在前表面的一侧具有部件。 该方法包括晶片 - 带保护部件形成步骤,其中通过压制通过压制和加热保护部件厚度将由热软化树脂的保护部件粘附到前表面的侧面,形成具有保护部件的晶片 测量具有保护部件的晶片中保护部件的厚度的测量步骤,以及磨削步骤,其中具有保护部件的晶片由卡盘台保持,晶片的后表面的一侧是研磨的 直到晶片的厚度达到预期的最终厚度。 在研磨步骤中,在厚度测量步骤中测量的保护部件的厚度从晶片的总厚度与保护部中减去,以便计算晶片的厚度。

著录项

  • 公开/公告号DE102021205460A1

    专利类型

  • 公开/公告日2021-12-02

    原文格式PDF

  • 申请/专利权人 DISCO CORPORATION;

    申请/专利号DE202110205460

  • 发明设计人 TOSHIYUKI SAKAI;HEIDI LAN;

    申请日2021-05-28

  • 分类号H01L21/304;H01L21/683;B24B7/16;

  • 国家 DE

  • 入库时间 2022-08-24 22:17:17

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