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DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE
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机译:用于源极和漏极结构的扩散阻挡层,以提高晶体管性能
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摘要
Various embodiments of the present disclosure are directed towards a semiconductor device including a gate electrode over a semiconductor substrate. An epitaxial source/drain layer is disposed on the semiconductor substrate and is laterally adjacent to the gate electrode. The epitaxial source/drain layer comprises a first dopant. A diffusion barrier layer is between the epitaxial source/drain layer and the semiconductor substrate. The diffusion barrier layer comprises a barrier dopant that is different from the first dopant.
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