DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE TRANSISTOR PERFORMANCE

摘要

Various embodiments of the present disclosure relate to semiconductor devices that include a gate electrode over a semiconductor substrate. An epitaxial source/drain layer is disposed on the semiconductor substrate and laterally adjacent to the gate electrode. The epitaxial source/drain layer includes a first dopant. A diffusion barrier layer is between the epitaxial source/drain layer and the semiconductor substrate. The diffusion barrier layer includes a different barrier dopant than the first dopant.