Transistor with electrostatic discharge protection has layer resistance of source and drain diffusion zones increased via insulating strip zones

摘要

The transistor has source and drain diffusion zones (16,17), with a gate electrode (12) positioned between them, the layer resistance of the source and drain diffusion zones increased by provision of a number of insulating strip zones (23) extending through the diffusion zones. The longitudinal direction of the insulating strip zones is perpendicular to the channel region, with the ends of the insulating strip zones spaced from the channel region.