Lateral power transistor used as a MOSFET or an insulated gate bipolar transistor comprises a source zone, a drain zone, a drift zone and a body zone arranged in a semiconductor layer and an electrode layer

摘要

Lateral power transistor comprises a source zone (11) of first conductivity, a drain zone (12), a drift zone (13) and a body zone (14) of second conductivity arranged in a semiconductor layer (101) and an electrode layer (20) isolated from the semiconductor layer and forming a gate electrode (21) and a field plate (22). The gate electrode is arranged next to the body zone and an accumulation section (131) of the drift zone. The gate electrode is isolated from the semiconductor layer using a gate dielectric layer (31). The gate electrode comprises a first gate electrode section (211) and a second gate electrode section (212) arranged between the first section and the field plate. An independent claim is also included for a method for the production of a lateral power transistor.