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FERROELECTRIC MEMORY DEVICE CONTAINING A SERIES CONNECTED SELECT GATE TRANSISTOR AND METHOD OF FORMING THE SAME
FERROELECTRIC MEMORY DEVICE CONTAINING A SERIES CONNECTED SELECT GATE TRANSISTOR AND METHOD OF FORMING THE SAME
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机译:包含串联连接选择栅极晶体管的铁电存储器件和形成相同的方法
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摘要
A ferroelectric memory unit cell includes a series connection of select gate transistor that turns the ferroelectric memory unit cell on and off, and a ferroelectric memory transistor. Data is stored in a ferroelectric material layer of the ferroelectric memory transistor. The ferroelectric memory unit cell may be a planar structure in which both transistors are planar transistors with horizontal current directions. In this case, the gate electrode of the access transistor can be formed as a buried conductive line. Alternatively, the ferroelectric memory unit cell may include a vertical stack of vertical semiconductor channels.
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