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Ferroelectric memory device having select gate transistor and method of forming same
Ferroelectric memory device having select gate transistor and method of forming same
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机译:具有选择栅极晶体管的铁电存储器件及其形成方法
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摘要
The memory cell includes a ferroelectric memory transistor and a select gate transistor that shares a common semiconductor channel, a common source region, and a common drain region with the ferroelectric memory transistor. The select gate transistor controls access between the common source region and the common semiconductor channel.
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