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FERROELECTRIC MEMORY DEVICE WITH SELECT GATE TRANSISTOR AND METHOD OF FORMING THE SAME
FERROELECTRIC MEMORY DEVICE WITH SELECT GATE TRANSISTOR AND METHOD OF FORMING THE SAME
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机译:具有选择栅极晶体管的铁电存储器件及其形成方法
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摘要
A memory cell includes a ferroelectric memory transistor, and a select gate transistor which shares a common semiconductor channel, a common source region and a common drain region with the ferroelectric memory transistor. The select gate transistor controls access between the common source region and the common semiconductor channel.
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