HYDROCARBON THIN FILM, PREPARATION METHOD FOR HYDROCARBON THIN FILM AND SEMICONDUCTOR DEVICES COMPRISIING HYDROCARBON THIN FILM

摘要

Based on high dielectric properties, the dielectric constant is significantly higher than that of SiO 2 thin films as well as Hf or Zr-based oxide thin films, and the uniformity of the thin film is excellent, and at the same time, the leakage current is very low and high dielectric strength characteristics are exhibited for semiconductors below the 10nm node. It is a hydrocarbon thin film that can be applied to a device to realize excellent performance, has an amorphous structure, has a dielectric constant of 10 or more, and has a secondary-ion mass spectrometry (SIMS) relative intensity ratio of 4 to 30 of hydrogen and carbon. , The binding energy peak (peak) present in 280eV to 290eV on the carbon 1s spectrum of X-ray photoelectron spectroscopy (XPS) is 1 keV argon (Ar + ) plasma etching under any one time condition of 5 seconds to 20 seconds. Provided are a hydrocarbon thin film having a binding energy (eV) movement width of 0.5 eV or less before and after treatment, a method for manufacturing the same, and a semiconductor device to which the same is applied.