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Semiconductor Quantum Dot/Polymer Thin Film Based Hydrocarbon Sensor: Characterization of Sensing Properties

机译:半导体量子点/聚合物薄膜的碳氢化合物传感器:感应性能的表征

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Semiconductor CdSe quantum dots (QDs) have been surface functionalized with aromatic ligands for the sensitive and selective detection of hydrocarbons (HCs). By fabricating rough nanostructured films on silicon substrates using the QDs embedded in poly(methyl methacrylate) (PMMA), we have achieved so-far the lowest detection limit for HCs (e.g. 15 ppm xylenes) within QD based sensing techniques. The introduced rough nanostructure of these films is thought to enhance the local electromagnetic field (EF), aiding in the observed high hydrocarbon (HC) sensitivity. Further, a detailed study of the sensing properties has revealed both QD photoluminescence (PL) enhancement and quenching processes, with the inversion point in the signal change occurring at increased HC levels, and being dependent on the QD surface ligand, QD loading, and polymer matrices. The following events appear to compete with each other, and determine the characteristic HC sensing behavior: 1) PL enhancement due to HCs adsorption on the QD surfaces or via pi-pi stacking interaction between the HCs and the QD surface groups, which dominates at low level HC exposures 2) Rough nanostructure registered local EF enhancement for enhanced photon absorption and emission from QDs, which diminishes with increased HC absorption in the film due to wetting effects at high level HC exposures, leading to significant PL quenching, and 3) Increased collection of background signal reflected from Si substrate under film wetting conditions, which may or may not be visible depending on QD loading and film thickness.
机译:半导体CdSe量子点(QDS)已经用芳族配体官能化,用于敏感和选择性检测烃(HCS)。通过使用嵌入聚(甲基丙烯酸甲酯)(PMMA)的QD在硅基上制造粗纳米结构薄膜,我们已经实现了基于QD的感测技术内的HCS(例如15ppm二甲苯)的最低检测限。引入的这些薄膜的粗纳米结构被认为增强了局部电磁场(EF),同时在观察到的高烃(HC)敏感性中。此外,对感测性的详细研究揭示了QD光致发光(PL)增强和淬火过程,其在信号变化中发生的反演点在增加的HC水平上发生,并且取决于QD表面配体,QD负载和聚合物矩阵。以下事件似乎彼此竞争,并确定特征HC感测行为:1)PL增强由于QD表面上的HCS吸附或通过HCS和QD表面组之间的PI-PI堆叠相互作用,这在低于低位水平HC暴露2)粗纳米结构登记的局部EF增强用于增强的光子吸收和来自QD的发射,这在膜中增加了由于高水平HC曝光的润湿效果,导致显着的PL淬火,并且3)增加在薄膜润湿条件下从Si衬底反射的背景信号,这取决于QD负载和膜厚度可能或可能不可见。

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