HYDROCARBON THIN FILM, METHOD OF PREPARING HYDROCARBON THIN FILM, AND SEMICONDUCTOR DEVICE COMPRISING HYDROCARBON THIN FILM

摘要

The present invention relates to a hydrocarbon thin film, a method of preparing same, and a semiconductor device using same, wherein the hydrocarbon thin film shows desirable uniformity as a thin film while having a significantly higher dielectric constant than that of a SiO₂ thin film or a Hf- or Zr-based oxide thin film; and has an extremely low leakage current and a high dielectric strength, and thus can be applied to a semiconductor device of 10 nm node or less and achieve a desirable performance. In particular, the hydrocarbon thin film has an amorphous structure; and has a dielectric constant of 10 or more, wherein a ratio of relative intensities between hydrogen and carbon as measured by secondary-ion mass spectrometry (SIMS) is in the range of 4 to 30, and on C 1s spectra of X-ray photoelectron spectroscopy (XPS), a binding energy peak present between 280 eV to 290 eV has a binding energy (eV) shift of 0.5 eV or less between before and after a surface treatment using 1 keV argon (Ar+) plasma etching under any one of time conditions in the range of 5 seconds to 20 seconds.