PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS

摘要

a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt %, based on the total solids of the composition; a second polymer comprising a repeating unit of formula (IV) and a repeating unit of formula (V); and a photoresist composition comprising a solvent: wherein R 5 independently represents H, a halogen atom, C 1 -C 3 alkyl, or C 1 -C 3 haloalkyl; R 6 is linear, branched or cyclic C 1 to C 20 fluoroalkyl R 7 represents linear, branched or cyclic C 1 to C 20 fluoroalkyl; L 3 is a polyvalent linking group; m is an integer from 1 to 50; wherein the second polymer is a non- free of fluorinated side chains; wherein the second polymer is present in an amount of 1 to 30 wt % based on the total solids of the composition). The invention may find application in particular in the manufacture of semiconductor equipment.