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Memo thyristor, semiconductor device having the same, and array system having memo thyristor

机译:备忘录晶闸管,具有相同的半导体器件,以及具有备忘录晶闸管的阵列系统

摘要

Problem to be solved: to provide a memostor capable of exhibiting a high order function of a biological system.The memorandum 10 is a memory stage which does not require an insulating breakdown process, and includes an oxide semiconductor layer 2 and terminals 3-6.The oxide semiconductor layer 2 comprises single crystal tio2-x (0 < x < 2) and contains dopants.The terminals 3 to 6 are disposed on the surface of the oxide semiconductor layer 2.The terminal 3 faces the terminal 5 and the terminal 4 faces the terminal 6.The terminals 3 to 6 apply voltage to the oxide semiconductor layer 2 to control the distribution of dopants in the oxide semiconductor layer 2 to two-dimensional distribution.Diagram
机译:要解决的问题:提供一种能够表现出生物系统的高阶功能的膜。备忘录10是不需要绝缘击穿过程的存储器级,并且包括氧化物半导体层2和端子3-6。氧化物半导体层2包括单晶TiO 2-x(0

著录项

  • 公开/公告号JP2021106262A

    专利类型

  • 公开/公告日2021-07-26

    原文格式PDF

  • 申请/专利权人 国立大学法人大阪大学;

    申请/专利号JP20200214807

  • 发明设计人 林 侑介;藤平 哲也;酒井 朗;

    申请日2020-12-24

  • 分类号H01L21/8239;H01L27/105;H01L27/10;H01L29/06;G06N3/063;G11C11/54;

  • 国家 JP

  • 入库时间 2022-08-24 20:10:02

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