The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off

摘要

This paper focuses on a new realization method of an Emitter Turn-off Thyristor (ETO). The unity gain turn-off capability of the Gate Commutated Thyristor (GCT) requires extremely low parasitic components within the gate path. The concept of the ETO postulates a MOSFET in the cathode current path of the thyristor, which causes several problems. A new approach leading to a significant smaller and less complex driver design is presented. The drawbacks of the known Emitter Turn-Off Thyristor (ETO) are eliminated by the integration of the MOSFETs into the press pack.