Numerical simulation of multilayered thyristor-like semiconductor devices.

摘要

We have developed a computer-aided model for a numerical simulation of multilayered, multijunction semiconductor devices. This model is used for numerical simulation of thyristor-like structures.; We have performed an analysis of gate turn-off thyristors in the regime of incomplete turn-off. Simulation results demonstrate that gate currents may be effectively used to control light from the central, highly conducting region of the device in this regime. We have done a numerical investigation of a novel nonhomogeneous thyristor structure, which substantially improves the fundamental trade-off between anode-cathode low forward voltage drop and the high turn-off speed of gate turn-off thyristors.; We report results of numerical simulation of reverse recovery processes in a two-terminal GaAs optothyristor. Our analysis has shown that the behavior of a PnpN structure, after reversing the anode voltage essentially depends on the width of the n-base. In the case of a narrow n-region, the punch-through effect essentially enhances removal of slow holes from the device. Reverse-recovery time for the regime of "n-base punch-through" is calculated in terms of device parameters for the first time.; We propose a new application of tunnel diodes for thyristor design. It is shown that thyristors employing both normal pn junctions and tunnel junctions can utilize properties of the tunnel junction to impart new or improved characteristics to the overall structure. The operation of this device is discussed.