RUNDUM-GATE FIELD EFFECT TRANSISTORS IN INTEGRATED SCHOLALS

摘要

an integrated circuit (IC),which has a memory cell with a first active p-range, a first active n-range, a second active-range and a second active p-range. Both the first and the second active p-range each have a first group of vertically stacked channel layers with a width Wi, and both the first and second active n-range each have a second group of vertically stacked channel layers with a width W2,where the width W2 is smaller than the width W1. The IC structure also has a standard logic cell with a third n-Finnish and a third p-Finnish. The third n-Finne has a third group of vertically stacked channel layers which have a width W3, and the third p-Finne has a fourth group of vertically stacked channel layers which have a width W4, the width W3 being greater than or equal to the width W4.