Vertically integrated field-effect transistor, the field effect transistor - arrangement and method for producing a vertically integrated field effect transistor

摘要

Vertically integrated field effect transistor• with a first electrically conductive layer;• with a partially made of dielectric material, means - layer on the first electrically conductive layer;• with a second electrically conductive layer on the means - layer;• with a into a in the means - layer is inserted through hole integrated nanostructure, with a first, with the first electrically conductive layer, which is coupled to the end portion and with a second, with the second electrically conductive layer, which is coupled to the end section;• the first end section of the nanostructure a first source - / drain - region and the second end section of the nanostructure a second source - / drain - region of the field effect transistor form;• the means - layer between two adjacent dielectric partial layers of a third electrically conductive layer whose thickness is less than the thickness of at least one of the dielectric layers;• where in the third electrically conductive layer which - the gate electrode of the field effect transistor forms, along the through hole that is introduced into them, a ring structure of a..