Underlayer film forming material for lithography, composition for forming an underlayer film for lithography, underlayer film for lithography and its manufacturing method, pattern forming method, resin, and purification method.

摘要

PROBLEM TO BE SOLVED: To provide a lower layer film forming material for lithography to which a wet process can be applied and which is useful for forming a photoresist underlayer film excellent in heat resistance and etching resistance. SOLUTION: A underlayer film forming material for lithography containing at least one of a compound represented by the formula (1) or a resin containing a structural unit derived from the compound represented by the formula (1). (1) (In the formula, R 1 is a 2n-valent group or a single bond having ^{1 to60 carbon atoms, and R 2} is independently a halogen atom and a linear or branched group having 1 to 10 carbon atoms. Alternatively, a cyclic alkyl group, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a hydrogen atom of a hydroxyl group is substituted with an acid dissociable group. It is a group, and may be the same or different in the same naphthalene ring or benzene ring.) [Selection diagram] None