首页> 外国专利> HIGH DENSITY PILLAR INTERCONNECT CONVERSION WITH STACK TO SUBSTRATE CONNECTION

HIGH DENSITY PILLAR INTERCONNECT CONVERSION WITH STACK TO SUBSTRATE CONNECTION

机译:高密度柱互连转换与堆叠到基板连接

摘要

A semiconductor device assembly can include a semiconductor device having a substrate and vias electrically connected to circuitry of the semiconductor device. Individual vias can have an embedded portion extending from the first side to the second side of the substrate and an exposed portion projecting from the second side of the substrate. The assembly can include a density-conversion connector comprising a connector substrate and a first array of contacts formed at the first side thereof, the first array of contacts occupying a first footprint area on the first side thereof, and wherein individual contacts of the first array are electrically connected to the exposed portion of a corresponding via of the semiconductor device. The assembly can include a second array of contacts electrically connected to the first array, formed at the second side of the connector substrate, and occupying a second footprint area larger than the first footprint area.
机译:半导体器件组件可以包括具有基板的半导体器件和电连接到半导体器件的电路的通孔。各个通孔可以具有从第一侧延伸到基板的第二侧的嵌入部分,以及从基板的第二侧突出的暴露部分。组件可以包括密度转换连接器,其包括连接器基板和在其第一侧形成的第一阵列,第一围绕其第一侧的第一围绕的阵列,并且其中第一阵列的各个触点电连接到半导体器件的相应通孔的暴露部分。组件可包括第二阵列电连接到连接器基板的第二侧的第一阵列的第二触点,并占据大于第一占地面积的第二占地面积。

著录项

  • 公开/公告号US2021134725A1

    专利类型

  • 公开/公告日2021-05-06

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201916671558

  • 发明设计人 OWEN R. FAY;KYLE K. KIRBY;AKSHAY N. SINGH;

    申请日2019-11-01

  • 分类号H01L23/538;H01L25/065;H01L23/498;H01L23;H01L21/48;

  • 国家 US

  • 入库时间 2024-06-14 21:30:52

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