首页> 外国专利> HIGH DENSITY PILLAR INTERCONNECT CONVERSION WITH STACK TO SUBSTRATE CONNECTION

HIGH DENSITY PILLAR INTERCONNECT CONVERSION WITH STACK TO SUBSTRATE CONNECTION

机译:高密度柱互连转换与堆叠到基板连接

摘要

A semiconductor device assembly can include a first semiconductor device and an interposer. The interposer can include a substrate and through vias in which individual vias include an exposed portion and an embedded portion, the exposed portions projecting from one or both of the first surface and the second surface of the substrate, and the embedded portions extending through at least a portion of the substrate. The interposer can include one or more test pads, a first electrical contact, and a second electrical contact. The semiconductor device assembly can include a controller positioned on an opposite side of the interposer from the first semiconductor device and operably coupled to the interposer via connection to the second electrical contact.
机译:半导体器件组件可包括第一半导体器件和插入器。插入器可包括基板和通过通孔,其中各个通孔包括暴露部分和嵌入部分,突出的部分从基板的第一表面和第二表面中的一个或两个突出,并且嵌入部分至少延伸基材的一部分。插入器可包括一个或多个测试垫,第一电触头和第二电接触。半导体器件组件可包括从第一半导体器件定位在插入器的相对侧上的控制器,并且通过连接到第二电触点可操作地连接到插入器。

著录项

  • 公开/公告号US2021134759A1

    专利类型

  • 公开/公告日2021-05-06

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201916671546

  • 发明设计人 OWEN R. FAY;KYLE K. KIRBY;AKSHAY N. SINGH;

    申请日2019-11-01

  • 分类号H01L25/065;H01L23/498;H01L23/31;H01L21/56;

  • 国家 US

  • 入库时间 2022-08-24 18:34:30

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