Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method

摘要

The invention relates to a power switching device having at least one transistor of the SiC or GaN MOSFET type able to be traveled by a main current. The power switching device has at least one measuring module configured to indirectly measure the main current of the transistor from the electromagnetic field produced by the transistor and at least one protection circuit configured to detect a short-circuit based on the sign of the temporal drift of the main current.