HEAT DISSIPATION PLATE, SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR MODULE

摘要

The present invention provides a heat dissipation plate which has a cladding structure of a Cu-Mo composite material and a Cu material, while satisfying the high heat dissipation characteristics required to a heat dissipation plate for semiconductor package with frame applications where a high-output small-sized semiconductor is mounted, and which is capable of preventing a crack in a frame due to local stress concentration if applied to a semiconductor package with a frame. A heat dissipation plate which is configured of three or more Cu layers and two or more Cu-Mo composite layers by alternately stacking the Cu layers and the Cu-Mo composite layers in the plate thickness direction, while arranging Cu layers as the outermost layers on both sides. The Cu layers serving as the outermost layers on both sides have a thickness t₁ of 40 μm or more; the thickness t₁ and the plate thickness T satisfy 0.06 ≤ t₁/T ≤ 0.27; and the thickness t₂ of each Cu-Mo composite layer and the plate thickness T satisfy t₂/T ≤ 0.36/(((number of all layers) – 1)/2) (wherein (number of all layers) is the sum of the number of Cu layers and the number of Cu-Mo composite layers).