Semiconductor devices, semiconductor device manufacturing methods and electronic devices

摘要

PROBLEM TO BE SOLVED: To enhance thermal conductivity between a substrate and a diamond layer provided therein. SOLUTION: A semiconductor device 1 exposes a substrate 10, an insulating layer 20 provided on the substrate 10, metal particles 30 groups provided so as to be exposed on a surface 20a of the insulating layer 20, and metal particles 30 groups. It includes a diamond layer 40 provided on the surface 20a of the insulating layer 20 to be formed. By adjusting the surface density and particle size of the metal particles 30 on the surface 20a of the insulating layer 20, the surface density of the diamond nuclei generated on the surface 20a is adjusted, and the diamond particles 43 are crystal-grown from the diamond nuclei. To obtain the diamond layer 40. By adjusting the surface density of the diamond nucleus, diamond particles 43 having a particle size showing relatively high thermal conductivity are crystal-grown in the initial crystal growth layer of the diamond layer 40, and heat conduction between the diamond layer 40 and the substrate 10 is achieved. Improve sex. [Selection diagram] Fig. 3