Film forming method, vacuum processing apparatus, semiconductor light emitting device manufacturing method, semiconductor light emitting device, semiconductor electronic device manufacturing method, semiconductor electronic device, and illumination device

摘要

The present invention provides a film forming method and a film forming apparatus capable of forming a + c polarity epitaxial film by a sputtering method. One embodiment of the present invention includes the following steps in a film forming method for epitaxially growing a semiconductor film having a wurtzite structure by sputtering on an epitaxial growth substrate heated to a predetermined temperature with a heater. First, the substrate is placed on a substrate holding portion having a heater so that the substrate is placed a predetermined distance away from the heater. Next, an epitaxial film of a semiconductor film having a wurtzite structure is formed on the substrate while adjusting the impedance of the substrate holding portion.