process for aetzen and contact of halbleiterkoerpern with pn - transition

• 1. 一种多阶梯环散装填料在精馏和吸收的气液接触过程或萃取液液传质过程中的应用 [P] . 中国专利： CN101693183B . 2012.04.11
• 2. 一种人与机器人接触过程中接触压强的测试方法 [P] . 中国专利： CN108908378A . 2018-11-30
• 3. process for oertlich limited aetzen pn - uebergaengen neighbouring areas in halbleiterkoerpern electrical halbleiteranordnungen [P] . 德国专利： DE000001152293A . 1963-08-01

  机译： 半导体本体中局部受限的aetzen pn-uebergaengen相邻区域的工艺

• 4. process for aetzen of a pn - the transition siliziumkoerpers containing a halbleiteranordnung [P] . 德国专利： DE000001248425A . 1967-08-24

  机译： 上的过渡过程-含硅藻土的过渡硅酮

• 5. process for aetzen of a pn - the transition siliziumkoerpers containing a halbleiteranordnung [P] . 德国专利： DE000001212819A . 1966-03-17

  机译： 上的过渡过程-含硅藻土的过渡硅酮

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• 3. PNL APPLICATION ON WCVD PROCESS-CONTACT STEP COVERAGE OPTIMIZATION FOR 0.13UM LOGIC PRODUCTS YIELD IMPROVEMENT [C] . Joel R.Brown, rnBrandon Bestelmeyer Semiconductor Technology(ISTC2008) . 2008
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• 5. A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics [O] . Cora M. Went, Joeson Wong, Phillip R. Jahelka, 2019
• 6. SHARPNESS VERSUS ROBUSTNESS OF THE PERCOLATION TRANSITION IN 2D CONTACT PROCESSES [O] . J. Van, Den Berg, J. E. Björnberg, 2016

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• 2. Ohmic contacts for atomically-thin transition metal dichalcogenide semiconductors [J] . Ning Wang . 半导体学报：英文版 . 2020,第7期
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