SEMICONDUCTOR UNIT AND METHOD OF FABRICATING THE SAME

• 1. 半导体光发射装置的制造方法、半导体光发射装置、半导体装置的制造方法、半导体装置、一种装置的制造方法、以及一种装置 [P] . 中国专利： CN1582520A . 2005-02-16
• 2. 氮化物半导体层叠物、半导体装置、氮化物半导体层叠物的制造方法、氮化物半导体自支撑基板的制造方法以及半导体装置的制造方法 [P] . 中国专利： CN110731002A . 2020-01-24
• 3. Semiconductor light emitting device, display unit, method of fabricating semiconductor light emitting device, and method of fabricating semiconductor laser [P] . 美国专利： US2005161681A1 . 2005-07-28

  机译： 半导体发光器件，显示单元，制造半导体发光器件的方法以及制造半导体激光器的方法

• 4. Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it [P] . 美国专利： US7371623B2 . 2008-05-13

  机译： 具有包括半导体单元的半导体电路的半导体器件及其制造方法

• 5. Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fabricating it [P] . 美国专利： US6586766B2 . 2003-07-01

  机译： 具有包括半导体单元的半导体电路的半导体器件及其制造方法

• 1. γ-Ray Irradiation Effect on MCF Rubber Solar Cells with both Photovoltaics and Sensing Involving Semiconductors Fabricated under Magnetic and Electric Fields [J] . Kunio Shimada, Ryoju Kato, Ryo Ikeda, 力学国际期刊（英文） . 2020,第008期
• 2. Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20-400 K [J] . H.Korkut 纳微快报：英文版 . 2013,第001期
• 3. A　Semiconductor　Position　Sensitive　Detector　Fabricated　by　Ion　Implantation　Technique [J] . 中国科学院近代物理研究所和兰州重离子研究装置年报：英文版 . 1994,第000期
• 4. Silicon-doped indium oxide-a promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method [C] . Ha Hoang, Kazutaka Sasaki, Tatsuki Hori International Conference on Materials Engineering and Nano Sciences . 2020
• 5. Characterization of n-type bismuth-tellurium-selenium and p-type bismuth-antimony-tellurium ternary like semiconductors fabricated by shock-waved (explosive) consolidation [D] . Munoz Estrada, Vianett Berenice 2007
• 6. Marginal adaptation of three-unit interim restorations fabricated by the CAD-CA systems and the direct method before and after thermocycling [O] . Leyla Sadighpour, Farideh Geramipanah, Mehran Falahchai, 2021
• 7. A Study on the Method to Embed the Thin Film Capacitor Fabricated by Semiconductor Technology [O] . Mitsuhiro WATANABE, Ichiro KOIWA, Hideo HONMA, 2006
• 8. Methods of Fabricating Gallium Nitride Semiconductor Layers on Substrates Including Non-Gallium Nitride Posts, and Gallium Nitride Semiconductor Structures Fabricated Thereby. [R] . Linthicum, K. J., Gehrke, T., Davis, R. F. 2005

• 1. New Method of Determining the Landau Levels in Narrow-Gap Semiconductors [J] . G. Gulyamov ,U. I. Erkaboev ,G. N. Majidova . 应用科学（英文） . 2015,第12期
• 2. Semiconductor Typ e Dep endent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20-400 K [J] . H. Korkut∗ . 安徽地质 . 2013,第001期
• 3. 半导体制造装置CKD [C] . 远藤楽 . 2017中国集成电路产业发展研讨会暨第二十届中国集成电路制造年会 . 2017
• 4. 面向半导体显示器制造企业的设备安全管理方法研究 [A] . 郭涛 . 2018