METHOD OF SELECTIVELY DEPOSITING GLASS ON SEMICONDUCTOR DEVICES

摘要

1464682 Semi-conductor device passivation RCA CORPORATION 10 April 1975 [19 April 1974] 14743/75 Heading H1K [Also in Division C1] A glass coating layer in a semi-conductor device, is selectively formed either on bare semiconductor regions or on areas coated with an insulating layer by forming a charge layer on the insulating material (e.g. in a gaseous corona discharge), immersing the charged device in a dispersion of charged glass particles in an insulating carrier liquid, drying the coated device and then firing it to fuse the glass coating. If the powder and the insulating surface have the same polarity the glass particles will deposit on the bare semi-conductor. The semi-conductor may be Si, the insulating layer SiO 2 , Si 3 N 4 or a photoresist; and the carrier liquid may be 1,1,2-trichloro-1,1,2-trifluorethane which contains a charging agent (e.g. zirconium octoate or petroleum magnesium, barium or ammonium sulphonate). An apparatus for charging the substrate and suitable coating glass compositions are disclosed. The coating may be made thicker by repeating the process using opposite polarities.