Non-linear semiconductor capacitor for radio and TV tuning - has monocrystalline wafer with two p-conductivity layers and base layer of N-conductivity

摘要

The semiconductor wafer having an N-type base layer and two P-type layers forming together two P-N junctions. The area of one of the P-N junctions is 30 to 50 times greater than that of the other P-N junction. The bigger P-N junction of an operating capacitor should be energized by a positive potential, thus becoming forward-biased, while the smaller junction should be energized by a negative potential, becoming reverse-biased. The resulting barrier capacitance of the reverse-biased junction determines the capacitor capacitance, and its variation with temperature is compensated by a simultaneously changing potential of the forward-biased and reversed-biased P-N junctions.