Manufacturing transistors on single semiconductor crystals using particle beam technology involves converting from n-conductivity to p-conductivity and vice-versa with electron or ion beams

摘要

The method involves converting from n-conductivity to p-conductivity and vice-versa with electron or ion beams. The dimensions of the transistor are smaller than the dimensions of the optical wavelength and particle beam methods are at least partly used. Ions from laser generated ion sources are used for implantation