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Junction field effect transistor having unsaturated drain current characteristic with lightly doped drain region
Junction field effect transistor having unsaturated drain current characteristic with lightly doped drain region
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机译:具有不饱和漏极电流特性和轻掺杂漏极区的结型场效应晶体管
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摘要
A field effect transistor has the property that the product of its series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the operative state of the transistor, the series resistance being the sum of the resistance from source to channel and the resistance of this channel. In order to prevent an excessive increase in the active resistance of the channel, the channel is made to have an impurity concentration as low as less than 10.sup.15 atoms/cm.sup.3, preferably less than 10.sup.14 atoms/cm.sup.3, so that the depletion layers extending from the gates grow extensively to become contiguous in response to a small increase in the reverse gate voltage applied. As a result, the field effect transistor of this invention has an unsaturated drain current versus drain voltage characteristic.
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机译:场效应晶体管的特性是,在晶体管的工作状态下,其串联电阻与其真实跨导的乘积在漏极电压的整个范围内小于一个,串联电阻是从源极到沟道的电阻之和和该通道的阻力。为了防止沟道的有源电阻过度增加,使沟道具有小于10.sup.15原子/ cm 3,优选小于10.sup.14的杂质浓度。原子/ cm 2,因此从栅极延伸的耗尽层随着所施加的反向栅极电压的小幅增加而广泛增长,变得连续。结果,本发明的场效应晶体管具有不饱和漏极电流对漏极电压的特性。
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