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Field effect transistor structure heavily doped source/drain regions and lightly doped source/drain regions
Field effect transistor structure heavily doped source/drain regions and lightly doped source/drain regions
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机译:场效应晶体管结构重掺杂的源/漏区和轻掺杂的源/漏区
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摘要
A field effect transistor structure includes heavily doped source/drain regions and lightly doped source/drain regions, The lightly doped source/drain regions extend form the source drain regions partway under a sidewall spacer adjacent a gate electrode. Very lightly doped source/drain regions extend the remainder of the way under the sidewall spacers to provide improved transistor characteristics.
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