Wet chemical etching of III/V semiconductor material without gas evolution

摘要

An etching solution for III/V semiconductor material, such as gallium arsenide, consists essentially of: 20 to 90 vol. % of phosphoric acid solution; 15 to 80 vol. % of hydrogen peroxide solution; 0 to 60 vol. % of water; and an amount of fluorine ion effective to provide at least 0. 01 mole of fluorine ion per liter of solution, said solution being effective to etch without evolving a gaseous product.