Planar semiconductor device with a guard ring structure, family of such devices and method of manufacture

摘要

Component type semiconductor "planar, comprising a substrate (11) heavily doped with doping concentration c _o and an epitaxial surface (12) carrier concentration c c _o, wherein are formed a pn junction (13) Primary depth x _j and a structure (14) of floating guard rings. According to the invention, this component also comprises, between the substrate (11) and the epitaxial surface layer (12), a second epitaxial layer (15) of concentration of holders c 'such that c _o c' c.; Application to power devices operating at high voltages.