MOLECULAR BEAM EPITAXIAL DEPOSITION DEVICE FOR FORMING SINGLE CRYSTAL THIN FILM

摘要

PURPOSE:To prevent the deterioration of electrical characteristics and periodicity of the periodic structure of a single crystal thin film resulting from the opening and closing of a cell shutter by forming a notch at the end part of a partition plate furnished in a growth chamber, and oscillating or rotating a substrate holder. CONSTITUTION:The inside of a growth chamber 1 is separated by a partition plate 10 with a notch at the end part, and III-group materials 6 and 7 are put in cells 4 and 5. Then a substrate 2 of a substrate holder 3 is arranged at the protrusion of the partition plate 10, and the holder 3 is oscillated and rotated with a point R of a rotary shaft 11 as a fulcrum by operating a manipulator to form alternately on the substrate 2 a III-IV group compd. semiconductor thin film consisting of the material 6 and a III-IV group compd. semiconductor thin film consisting of the material 7. The mixing of the molecular beams with each other can be prevented in this way, and the growth of the single crystal thin film having single composition can be guaranteed.