首页> 外国专利> MOLECULAR BEAM EPITAXIAL DEPOSITION DEVICE FOR FORMING PERIODIC STRUCTURE OF SINGLE CRYSTAL THIN FILM

MOLECULAR BEAM EPITAXIAL DEPOSITION DEVICE FOR FORMING PERIODIC STRUCTURE OF SINGLE CRYSTAL THIN FILM

机译:用于形成单晶薄膜的周期性结构的分子束外延沉积装置

摘要

PURPOSE:To prevent the deterioration of electrical characteristics and periodicity of the periodic structure of a single crystal thin film resulting from the opening and closing of a cell shutter by providing a partition plate in a growth chamber, separating the chamber into plural partitions, and furnishing plural rotatable substrate holders. CONSTITUTION:Plural substrate holders 11 having its center on the circumference are arranged in a growth chamber 1 with a rotary shaft 10 as the center. The first regular square partition plate 12 furnished with notches (a) and (b) in the suitable form is provided parallel to the holder 11 in the proximity of a substrate 16. And one second partition plate 13 vertical to the partition plate 12 is provided in the radial direction of a circle on which the holders 11 are arranged to form partitions A and B. Cells 14 and 15 contg. semiconductor materials 18 and 19 are provided in the partitions A and B.
机译:目的:通过在生长室中设置隔板,将室分隔成多个隔板并进行布置,以防止由于单元百叶窗的打开和关闭而导致的单晶薄膜的电特性和周期性结构的恶化,多个可旋转的基板支架。组成:以圆周为中心的多个基板支架11设置在以旋转轴10为中心的生长室1中。在基板16的附近,与保持架11平行地设置有设有缺口(a)和(b)的第一正方分隔板12,并且,垂直于分隔板12设置有一个第二分隔板13。在一个圆的径向上,保持架11布置在其上以形成隔板A和B。单元格14和15连续。半导体材料18和19设置在隔板A和B中。

著录项

  • 公开/公告号JPS6247839B2

    专利类型

  • 公开/公告日1987-10-09

    原文格式PDF

  • 申请/专利权人 KOGYO GIJUTSUIN;

    申请/专利号JP19840012062

  • 发明设计人 MATSUI JUICHI;

    申请日1984-01-27

  • 分类号C30B23/02;

  • 国家 JP

  • 入库时间 2022-08-22 07:22:56

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号