Laser diode having a buried active layer and lateral current limiting, and a method for its production

摘要

In the case of laser diodes having lateral current limiting by means of barrier p-n junctions, the problem arises at high powers that leakage currents make the thyristor structure permeable on the sides of the active layer (4). This problem is solved by the layer sequence of the thyristor structure being partially interrupted by lateral layers (5) consisting of a different material. The material of the lateral layers (5) is selected such that it has a lower energy band separation than the other layers (3, 6, 7, 8, 9) and thus dissipates the leakage currents before they trigger the thyristor. IMAGE