OPTOELECTRONIC DEVICE BASED ON III-V COMPOUNDS ON SILICON SUBSTRATE

摘要

The invention relates to an optoelectronic device implanted on a silicon substrate 1 and comprising in particular on this substrate a set of adaptation layers 2 on which are produced a first confinement layer 3 based on indium phosphide, an active layer 4 based on indium phosphide. of: Gax In1 - x Asy P1 - y and a second active layer 5 of indium phosphide. /P P Applications: optoelectronic device in the field of telecommunications in particular.