OPTOELECTRONIC DEVICE BASED ON III-V COMPOUNDS ON SILICON SUBSTRATE

摘要

The device consists mainly of a set of interfacing layers (2) implanted on a silicon substrate (1). The following layers are produced on the layers (2): a first indium-phosphide-based confinement layer (3), an active layer (4) based on GaxIn1-xAsyP1-y, and a second active layer (5) of indium phosphide. …??Application to optoelectronic devices, especially in the field of telecommunications. …IMAGE…