m represents a positive integer equal to or multiple integer of the valence number for R, n, represents a positive integer equal to or multiple integer of the valence number for M, M represents an element belonging to the group II of the periodical table, R represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group, a re­presents a positive integer equal to or multiple integer of the valence number for B, b represents a positive integer equal to or multiple integer of the valence number for A and A represents an element belonging to the group VI of the periodical table, B represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group."/> Process for the formation of a functional deposited film containing groups II and VI atoms as the main constituent atoms by microwave plasma chemical vapor deposition process
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Process for the formation of a functional deposited film containing groups II and VI atoms as the main constituent atoms by microwave plasma chemical vapor deposition process

机译:通过微波等离子体化学气相沉积法形成包含II族和VI族原子作为主要构成原子的功能性沉积膜的方法

摘要

A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a compound (1) and a compound (2) represented respectively by the following general formulae (I) and (II) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in excited state which cause chemical reaction with at least one of said compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from said film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled:RnMm      (I)AaBb      (II)where m represents a positive integer equal to or multiple integer of the valence number for R, n, represents a positive integer equal to or multiple integer of the valence number for M, M represents an element belonging to the group II of the periodical table, R represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group, a re­presents a positive integer equal to or multiple integer of the valence number for B, b represents a positive integer equal to or multiple integer of the valence number for A and A represents an element belonging to the group VI of the periodical table, B represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group.
机译:一种形成功能性沉积膜的方法,该方法将一种化合物(在化合物的形成过程中,将属于元素周期表第II和VI族的原子作为主要构成原子的成膜空间引入成膜空间,以在沉积膜上形成沉积膜。 1)和分别由以下通式(I)和(II)表示的化合物(2)作为成膜原料,并且如果需要,还包含含有能够控制所沉积的价电子的元素的化合物(3)膜作为构成元素分别处于气态或至少一种这样的化合物在与成膜空间分开设置的活化空间中被预先活化的状态,同时形成处于激发态的氢原子,该氢原子引起与在不同于所述成膜空间的活化空间中,以气态或活化态的所述化合物(1),(2)和(3)中的至少一种并将其引入到用于形成空间,从而在基板上形成功能性沉积膜,其中激发态的氢原子是通过等离子体产生的微波等离子体由氢气或由氢气和稀有气体组成的气体混合物形成的放置在空腔谐振器中的腔室,该谐振器与微波电路中的两个阻抗匹配电路集成在一起,并且控制氢原子的激发态:RnMm(I)AaBb(II)其中 m 表示一个等于R的价数的正整数或多个整数, n 表示一个等于R的价整数或M的化合价的多个整数,M代表属于元素周期表第II组的元素,R代表选自氢(H),卤素(X)和烃基的成员, a 表示等于B的价数的正整数或多个整数, b 表示等于B的价数的正整数或多个整数。 A表示属于元素周期表第VI族的元素,B表示选自氢(H),卤素(X)和烃基的成员。

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