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Process for the formation of a functional deposited film containing groups III and V atoms as the main constituent atoms by microwave plasma chemical vapor deposition process

机译:通过微波等离子体化学气相沉积法形成包含III族和V族原子作为主要组成原子的功能性沉积膜的方法

摘要

A process for the formation of a functional deposited film containing atoms belonging to the group III and V of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a compound (1) and a compound (2) represented respectively by the following general formulae (I) and (II) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a micro­wave circuit and the excited state of the hydrogen atom is controlled:RnMm      (I)AaBb      (II)where m represents a positive integer equal to or multiple integer of the valence number for R, n represents a positive integer equal to or multiple integer of the valence number for M, M represents an element belonging to the group III of the periodical table, R represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group, a represents a positive integer equal to or multiple integer of the valence number for B, b represents a positive integer equal to or multiple integer of the valence number for A and A represents an element belonging to the group V of the periodical table, B represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group.
机译:通过将化合物(以下简称为化合物(以下称为化合物),在成膜空间中形成用于形成沉积膜的功能的沉积膜的方法,该沉积膜包含元素周期表的III和V族原子作为主要构成原子。 1)和分别由以下通式(I)和(II)表示的化合物(2)作为成膜原料,并且如果需要,还包含含有能够控制所沉积的价电子的元素的化合物(3)膜作为构成元素分别处于气态或至少一种这样的化合物在与成膜空间分开设置的活化空间中被预先活化的状态,同时形成处于激发态的氢原子,该氢原子引起与在不同于成膜空间的活化空间中以气态或活化态的化合物(1),(2)和(3)中的至少一种并将其引入成膜剂中从而在基板上形成功能性沉积膜,其中通过等离子体产生的微波等离子体,由氢气或由氢气和稀有气体组成的气体混合物形成处于激发态的氢原子设置在空腔谐振器中的腔室,该谐振器与微波电路中的两个阻抗匹配电路集成在一起,并且控制氢原子的激发态:RnMm(I)AaBb(II)其中m表示等于或大于R的化合价的多个整数,n表示等于或大于M的化合价的多个整数,M表示属于元素周期表第III族的元素,R代表选自氢(H),卤素(X)和烃基的成员,a代表等于或大于B的化合价的正整数,b代表等于或大于B的化合价的整数A和A代表属于元素周期表第V族的元素,B代表选自氢(H),卤素(X)和烃基的成员。

著录项

  • 公开/公告号EP0326986B1

    专利类型

  • 公开/公告日1993-06-02

    原文格式PDF

  • 申请/专利权人 CANON KABUSHIKI KAISHA;

    申请/专利号EP19890101534

  • 发明设计人 KANAI MASAHIRO;

    申请日1989-01-30

  • 分类号C23C16/06;C23C16/44;H01L21/205;

  • 国家 EP

  • 入库时间 2022-08-22 05:06:34

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