COMPOUND CONDUCTOR LAYER OF SEMICONDUCTOR DEVICE, HOLE-MAKING PROCESS OF CAPACITOR USING COMPOUND CONDUCTOR LAYER AND COMPOUND CONDUCTOR LAYER

摘要

PURPOSE:To avoid the cracking and the release of an insulating layer by a method wherein an auxiliary conductive layer for enhancing the adherence to the insulating layer is provided on a metallic layer with low electric resistance comprising a main conductive layer. CONSTITUTION:A main conductive layer comprising a material with low electric resistance is formed on an underneath layer 26; an auxiliary conductive layer 24 comprising Ti, Si, Ge or mixture (including alloy) thereof is formed on the layer 22; and then an insulating layer 28 is formed on the layer 24. The layer 24 intends to enhance the adherence to the layers 22 and 28. That is, the main conductive layer 22 comprising three layers 32, 34, 36 are formed on the substrate 26 as a GaAs substrate whereon an insulating layer comprising Si nitride is formed. Furthermore, the layer 32 comprises exceeding one kind of elements selected from Au, Pt, Al, Cu; the layer 34 comprises exceeding one kind of elements such as Pt, W, Mo; and the layer 36 comprises exceeding one kind of elements selected from Ti, Si, Ge. The auxiliary conductive layer 24 and the insulating layer 28 are formed on the layer 22. The layers 24 and 28 are respectively formed of Ti and Si nitride. Furthermore, the said layers can be compounded to form a capacitor.