The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films. In result, the pure （100） orientation CeO2 buffer layer is obtained, and the full width half maximum （FWHM） of the Ф-scan of CeO2（111） is 8.5°. However, there exist two orientations in the Y2O3 a-b plane, one is Y2O3 （110）‖Ni（100）, the other is Y2O3 （100）‖Ni（100）. In addition, the AES analysis!shows that the interface of CeO2/Ni is better than that of Y2O3/Ni. The SEM observations indicate that the surfaces of two buffer layers are quite dense and crack-free, though some triangular hillocks are scattered on both surfaces.
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