MOLECULAR BEAM EPITAXY METHOD AND COMPOUND SEMICONDUCTOR FILM

摘要

PURPOSE: To provide a compound semiconductor film having slight incorporation of impurity carbon in molecular beam epitaxy method using a gas as a raw material for molecular beam, in a compound semiconductor film produced by this method and in molecular beam epitaxy method suppressing incorporation of impurity carbon in the compound semiconductor film. ;CONSTITUTION: An organometallic raw material gas is preheated and decomposed in a molecular beam cell 10, a substrate 15 is irradiated with the decomposed gas and epitaxial growth is carried out to provide a compound semiconductor film. Since the bond between a metal atom and carbon atom in the organometallic molecule is completely cleft and there is no carbon atom which is linked to a metal atom and incorporated with the compound semiconductor film, the method has effects on improving purity of compound semiconductor.;COPYRIGHT: (C)1993,JPO&Japio