MOLECULAR BEAM EPITAXY METHOD FOR FABRICATING MAGNESIUM DOPED THIN FILMS OF GROUP III(A)-V(A) COMPOUNDS

摘要

In a molecular beam epitaxy method of fabricating a Mg doped thin film of a compound of the form AlxB1-xC, where B is a Group III(a) element and C is a Group V(a) element, the sticking coefficient of magnesium is a nonlinear, monotonically increasing function of the amount of aluminum. P-type thin films of AlxB1-xC:Mg having a predetermined carrier concentration are fabricated by including in the molecular beam(s) an appropriate amount of aluminum determined from said function.